Abstract
Patterned all-graphene circuits, in which semiconducting graphene nanoribbon (GNR) device channels are connected by metallic GNR interconnects, raise possibilities for carbon-based electronics. The properties of GNR metal-semiconductor junctions, which are the key elements in all-graphene circuits, are studied by atomistic simulations. The junction conductance strongly depends on the atomistic features of the access geometry from the metallic GNR to the semiconducting GNR. Highly localized states exist at the junction edges, which can result in sharp metal-induced gap states. A defect of a single lattice vacancy can significantly increase rather than decrease the junction conductance for certain junction geometries.
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