Abstract
An incommensurate overlayer structure on a Ga/Si(111) surface, which can be identified with the $6.3\sqrt{3}\ifmmode\times\else\texttimes\fi{}6.3\sqrt{3}R30\ifmmode^\circ\else\textdegree\fi{}$ superstructure observed by the electron diffraction method, has been directly observed using scanning tunneling microscopy. The domain-wall pattern of this structure consists mainly of an array of isolated triangles, in contrast to the meshlike network usually observed on an incommensurate overlayer. A particular feature of this structure is that it assumes a rare domain configuration with $p31m$ symmetry, rather than the $p3m1$ symmetry of the underlying Si(111) double layer, to relax the strain induced by its relatively high Ga coverage.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
