Metal Semiconductor Field Effect Transistors with Conducting NbS2/n-MoS2 Van Der Waals Schottky Junction and Graphene Contact

Abstract

We have fabricated van der Waals (vdW) Schottky junction between high work function conducting NbS2 transition metal dichalcogenide (TMD) and semiconducting n-MoS2 TMD for metal semiconductor field effect transistors (MESFETs). The Schottky barrier between NbS2 and MoS2 appeared as large as ~0.5 eV due to their work function difference, as measured by scanning Kelvin probe. Schottky effect MESFET operates with a low threshold gate voltage of -0.5 ~ -1 V exhibiting easy saturation. Since this FET contains low density traps at the vdW interface, little gate hysteresis and ideal subthreshold swing of 60~80 mV/dec are expected. In addition, source/drain (S/D) contact for n-channel MoS2 could significantly affect device mobility. In the case of the graphene S/D contact, the device shows the highest mobility of more than 800 cm2/V s, although the device shows the lowest mobility of ~15 cm2/V s in the case of Au/MoS2 contact without an annealing process. TMD-based MESFET with NbS2/n-MoS2 junction is considered novel and promising in future 2D device electronics.