Abstract
Planar Pd, Pt, Au, and Ag Schottky diodes with low ideality factors were fabricated on the Zn-polar (0001) and O-polar (0001¯) faces of bulk, single crystal ZnO wafers. The diodes were characterized by current-voltage and capacitance-voltage measurements. A polarity effect was observed for Pt and Pd diodes with higher quality barriers achieved on the O-polar face. No significant polarity effect was observed for Au or Ag diodes. The highest barriers were achieved with Ag as the Schottky metal with barrier heights varying between 0.77 and 1.02eV. This is possibly due to varying degrees of oxidation of the Ag contacts.
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