Metal‐Oxide Transistors: Coating Thickness Controls Crystallinity and Enables Homoepitaxial Growth of Ultra‐Thin‐Channel Blade‐Coated In2O3 Transistors (Adv. Electron. Mater. 11/2020)

Abstract

Lee Richter and co-workers explore the role of channel thickness in controlling crystallinity and charge transport in metal-oxide transistors with ultra-thin channels fabricated using blade-coating at low temperatures in article number 2000354. Highly oriented oxide crystals below a critical thickness enable channel deposition via solution-epitaxy resulting in band-like transport with electron mobilities of ca. 40 cm2 V−1 s−1. These findings are attractive for electronic applications that require ultra-thin channels with high mobilities, such as flexible large-area displays and biosensors.