Metal oxide/silicon oxide multilayer with smooth interfaces produced by in situ controlled plasma-enhanced MOCVD

Abstract

Molybdenum oxide/silicon oxide and tungsten oxide/silicon oxide multilayer with 24 periods and a period thickness of 9.2 nm were fabricated with plasma-enhanced MOCVD. The layer thickness was controlled by an in situ soft X-ray reflectivity measurement. For the deposition of the SiO 2 layers, a new silicon organic precursor, pentamethylcyclopentadienyldisilane (Me 5C 5Si 2H 5) was used in an O 2 remote plasma process. The high quality of multilayer interfaces was observed by cross-section transmission electron microscopy (TEM), the interface Toughness wasmeasured by hard X-ray reflectivity and diffuse scattering at grazing incidence experiments to be about 0.1 nm. Auger electron spectroscopy (AES) gives the information, that the silicon oxide is practically carbon free, and the carbon content of the metal oxides is low (<5%).