Abstract
Metal oxide nanowires have become the new building blocks for the next generation optoelectronic devices due to their specific features such as quantum confinement and high aspect ratio. Thus, they can be integrated as active components in diodes, field effect transistors, photodetectors, sensors, solar cells and so on. ZnO, a n-type semiconductor with a direct wide band gap (3.3 eV) and CuO, a p-type semiconductor with a narrow band gap (1.2–1.5 eV), are two metal oxides which were recently in the spotlight of the researchers for applications in the optoelectronic devices area. Therefore, in this chapter we focused on ZnO and CuO nanowires, the metal oxides nanowire arrays being prepared by straightforward wet and dry methods. Further, in order to emphasize their intrinsic transport properties, lithographic and thin films deposition techniques were used to integrate single ZnO and CuO nanowires into diodes and field effect transistors.
Highlights
Metal oxide nanowires, one dimensional nanostructures characterized by a high aspect ratio [1], have gained a special interest owed among others to their large specific area given by the size effects
We present our research regarding the preparation and complex characterization of metal oxide nanowire arrays by wet and dry approaches
CuO nanowires prepared by thermal oxidation in air at 500°C were used to develop diodes and FETs based on single CuO nanowires, these nanowires being chosen owed to the smaller diameter of about 60 nm and the lengths of about 30 μm for the nanowires
Summary
Metal oxide nanowires, one dimensional nanostructures characterized by a high aspect ratio [1], have gained a special interest owed among others to their large specific area given by the size effects This feature is responsible for their high sensitivity that is very important in a wide range of applications in optoelectronics [2], electrochemical sensors [3], spintronics [4], photocatalysis [5], noninvasive medical diagnosis [6], drug delivery [7], etc. Copper oxide (CuO) is a p-type semiconductor easy to prepare, with a high stability, having an indirect narrow band gap (1.2–1.8 eV) This metal oxide can be implemented in various applications such as: solar cells [38], field effect transistor [11], gas sensors [39], photocatalysis [40], water purification [41], etc. The electrical properties of the electronic devices based on single metal oxide nanowires prepared by wet and dry methods were analyzed and discussed
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