Metal–Oxide–High-$\kappa$ Dielectric–Oxide–Semiconductor (MOHOS) Capacitors and Field-Effect Transistors for Memory Applications

Abstract

Metal-oxide-high-kappa dielectric-oxide-silicon capacitors and transistors are fabricated using HfO2 and Dy2O3 high-kappa dielectrics as the charge storage layer. The programming speed of Al/SiO2/Dy2O3/ SiO2/Si transistor is characterized by a DeltaV th shift of 1.0 V with a programming voltage of 12 V applied for 10 ms. As for retention properties, the Al/SiO2/Dy2O3/ SiO2/Si transistors can keep a DeltaV th window of 0.5 V for 2 times108 s. The corresponding numbers for Al/ SiO2/HfO2/SiO2/Si transistors are 100 ms and 2 times104 s, respectively. The better performance of the Al/SiO2/Dy2O3/ SiO2/Si transistors is attributed to the larger conduction band offset at the Dy2O3/SiO2 interface.