Abstract
Investigation of the properties of Al2O3-on-GaN metal-oxide-semiconductor diodes is reported. A new method is shown to calculate the metal-oxide barrier height based on the onset of the Fowler-Nordheim tunnelling current regime in direct bias. The Ni/Al2O3 barrier was extracted, for the first time with this method, and it was found to match other reports in the literature. The dependence of the effectiveness of this method on the oxide thickness is discussed. The breakdown field for Al2O3 was also measured and found to be in agreement with previous reports.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
