Abstract
This contribution reports the metal organic vapor phase epitaxy of InAsP/InP(001) quantum dots with a voluntary V-alloying obtained owing to an additional phosphine flux during InAs quantum dot growth. The quantum dots were studied by photoluminescence and transmission electron microscopy. We show that the additional phosphine flux allows to tune quantum dot emission around 1.55 μm while improving their optical properties. The comparison of the optical and structural properties of the InAsP quantum dots allows to deduce their phosphorus composition, ranging from 0% to 30% when the phosphine/arsine flow ratio is varying between 0 and 50. On the basis of the compositions deduced, we discuss on the effects of the phosphine flow and of the alloying on the quantum dot growth, structural, and optical properties.
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