Abstract
We have grown a high-quality AlInSb film by metal organic vapor-phase epitaxy using tritertiarybutylaluminum (TTBAl), trimethylindium (TMIn), and tris(dimethylamino)antimony (TDMASb). In general, difficulty in the growth of AlInSb using TTBAl and TDMASb is attributed to the pre-reaction. However, we clarified that gas turbulence is dominant in AlInSb growth. To overcome this problem, we proposed a new growth sequence, in which TTBAl was irradiated at a low flow rate at the initial stage of AlInSb growth, resulting in a high crystallinity AlInSb film with a flat surface. The carbon concentration was 9 × 1016 cm−3 for Al0.18In0.82Sb which is the lowest value among those reported for other AlSb based alloys.
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