Abstract
La0.7Sr0.3CoO3 (LSCO) thin films were epitaxially grown on (001)-single crystalline LaAlO3 substrates by metal organic deposition. The evolution of the crystallinity of the films having various thicknesses and obtained at various annealing temperatures is investigated using Raman spectroscopy. The Raman mode associated to the Jahn-Teller distortions in the LSCO films is found to be dependent on the annealing temperature and sensitive to the strain state evolution with film thickness. The microstructure and morphology of the obtained films were investigated using transmission electron microscopy observations on cross-sections and atomic force microscopy. The obtained films are characterized by nanocrystalline morphology, with an average roughness around 5 nm. By increasing the annealing temperature to 1000℃ and the film thickness to 100 nm, the electrical resistivity was decreased by several orders of magnitude. The film resistivity reaches approximately 2.7 × 10–4 Ω•cm in a wide interval of temperature of 77 - 320 K, making this material a promising candidate for a variety of applications.
Highlights
Strontium-doped lanthanum cobaltite (La1−xSrxCoO3: LSCO) has created renewed research interest in the mixed valence transition metal-oxides with perovskite and related structures
Microstructure and Surface Morphology of the Films Raman spectroscopy is a powerful tool for a study of various vibrational modes and electronic transitions in solids
In order to confirm the absence of secondary phases or microstructural defects by increasing the annealing temperature or film thickness, we carried out detailed micro-Raman spectroscopy measurements
Summary
Strontium-doped lanthanum cobaltite (La1−xSrxCoO3: LSCO) has created renewed research interest in the mixed valence transition metal-oxides with perovskite and related structures Owing to their relatively high electrical [1]-[3] and ionic conductivity [4]-[6], cobaltites in thin film forms have been used in fuel cells, oxygen penetration membranes, and as electrodes in ferroelectric memory technology. To reduce the production cost, preparation of the epitaxial LSCO thin films using a simple process will be appreciated by researchers and engineers The chemical processes such as sol-gel [8]-[11] or metal organic deposition (MOD) [12] do not require a vacuum system and a complex apparatus which is important for several applications. The structural, morphology and electrical properties of the LSCO films grown on LAO substrates by MOD process have been discussed
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