Abstract
We report the application of the metal – organic chemical vapour deposition (MOCVD) technique to the formation of ferro-electric SrBi2Ta2O9 (SBT). MOCVD is a desired technique for the application of high-density ferro-electric memory because it can produce high quality, conformal, very thin films. There has been much progress in gas delivery methods and in precursors, which greatly affect controllability and reproducibility of the MOCVD process for fabricating ferro-electric thin films. With appropriate precursors and optimized gas delivery conditions, MOCVD can produce high-performance ferro-electric SBT films. When forming SBT thin films, precise control of composition is essential to acquire the electrical properties needed for ferro-electric memory applications. Copyright © 2000 John Wiley & Sons, Ltd.
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