Abstract
Recently, wide bandgap metal oxides have attracted tremendous attention in the field of UV photodetectors due to their promising optoelectronic properties. Up to now, various approaches have been used to design metal oxide-based UV photodetectors. Among these designs, p-n junction UV photodetectors exhibited remarkable performance. In this study, TiO2/CuCrO2 p-n junction as a UV photodetector was fabricated with spin coating method for the first time. The morphological and optical properties of the fabricated devices were investigated in detail. Moreover, the effect of the CuCrO2 thickness on the performance of the UV photodetector was explored. The fabricated devices showed promising diode behavior and UV response. The responsivity (R) and specific detectivity (D*) of the best device were 3.11 mA/W and 2.37x1011 Jones, respectively at -1.5 V under 3 mW/cm2 light intensity.
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