Abstract
AbstractThe stability and electronic properties of metal (Ni, Au)‐vacancy complexes in GaN were studied using density functional calculations. Two complexes (NiGa‐VN and VGa‐Aui‐VN) were found to exhibit relatively low formation energies in their neutral charge state under p‐type conditions and are predicted to act as deep acceptors in GaN. As such they are unlikely to contribute to the hole carrier concentration in p‐GaN and are probably not responsible for the low electrical resistance of Au/Ni contacts. They may, however, act as compensation centres in n‐GaN. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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