Abstract
Atomically thin two-dimensional (2D) transition metal dichalcogenides have also attracted immense interest because they exhibit appealing electronic, optical and mechanical properties. In this work, we prepared gold nanoparticle-decorated molybdenum sulfide (AuNP@MoS2) through a simple spontaneous redox reaction. Transmission electron microscopy, UV-Vis spectroscopy, and Raman spectroscopy were used to characterize the properties of the AuNP@MoS2 nanomaterials. Then we employed such nanocomposites as the cathode buffer layers of organic photovoltaic devices (OPVs) to trigger surface plasmonic resonance, leading to noticeable enhancements in overall device efficiencies. We attribute the primary origin of the improvement in device performance to local field enhancement induced by the effects of localized surface plasmonic resonance. Our results suggest that the metal nanoparticle-decorated two-dimensional materials appear to have great potential for use in high-performance OPVs.
Highlights
Organic photovoltaic devices (OPVs) have received a great deal of attention because they feature many advantageous properties, including light weight, low cost, mechanical flexibility and short energy payback time [1,2,3]
Because the overall quantum efficiency is governed by the internal quantum efficiency (IQE) and absorption efficiency, efficient light absorption in organic photovoltaic devices (OPVs) is still critical for further improving the power conversion efficiencies (PCEs)
As revealed by the previous high-resolution transmission electron microscopy (TEM) image (Figure 2d), the close peak at 535 nm, which is corresponding to the localized surface plasmonic resonance (LSPR) of the Au contact between the Au NPs and MoS2 nanosheets might lead to coupling of their plasmonic resonance
Summary
Organic photovoltaic devices (OPVs) have received a great deal of attention because they feature many advantageous properties, including light weight, low cost, mechanical flexibility and short energy payback time [1,2,3]. The TMDs that having direct band gaps, such as MoS2 and WS2 , have been employed in many applications [24,25], including field effect transistors [26], photodetectors [27], light-emitting devices [28] and sensors [29]. These TMDs have been incorporated into OPVs as interfacial buffer layers for improving their device stability and/or efficiencies [30,31,32,33,34]. We have found that the Au NPs anchored on the MoS2 nanosheets induced the SR effects, which could effectively improve the device performance
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