Abstract

With the growth of nanoelectronics, the importance of thermal management in device packaging and the improvement of high-current-carrying interconnects/wires for avoiding the premature failure of devices have been emphasized. The heat and electrical transport properties of the bulk may not be valid in the characterization of a material at the nanometer level, because the phenomena that occur at the interfaces and grain boundaries become dominant. The failure mechanism of bulk metal interconnects has been understood in the context of electromigration; however, in nanoscale materials, the effect of the heat dissipation that occurs at the nanointerfaces may play an important role. Here, we report the preparation of continuous carbon nanotube (CNT)–Cu composite fibers that possess Cu nanofibrillar structures with a high current-carrying capacity. Various-shaped CNT–Cu microfibers with different Cu grain morphologies were produced via Cu electroplating on continuous CNT fibers. Cu fibril structures were embedded in the voids inside the CNT fiber during the early stage of electrodeposition. The temperature-dependent and magnetic field-dependent electrical properties and the ampacity of the produced CNT–Cu microfibers were measured, and the failure mechanism of the fiber was discussed. The interconnection of Cu nanograins on the surface of the individual CNTs contributed to the enhancement in the charge-carrying ability of the fiber. The effective ampacity of the Cu nanofibrils was estimated to be ~1 × 107 A/cm2, which is approximately 50 times larger than the ampacity measured for a bulk Cu microwire.

Highlights

  • The enhancement of the current-carrying capacity is a crucial issue for many applications, such as integrated microelectronic/optoelectronic devices[1], high-power devices[2,3] and power transmission cables

  • Continuous carbon nanotube (CNT) fibers were prepared via direct spinning using a floating catalyst chemical vapor deposition (CVD) method[14]

  • Under a high current bias, the outer Cu layer becomes disconnected through electromigration beginning at the grain boundaries, which is similar to the failure in bulk Cu

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Summary

Introduction

The enhancement of the current-carrying capacity is a crucial issue for many applications, such as integrated microelectronic/optoelectronic devices[1], high-power devices[2,3] and power transmission cables. Hot carriers that are generated under a high current bias significantly degrade the performance of the devices and/or reduce the lifetimes of the cables and circuits[4]. Enhancing the current-carrying capacity of interconnect materials composed of metal nanostructures and nanocarbon materials, such as carbon nanotubes (CNTs) and graphene, may be a solution[8,9,10,11,12]. In these approaches of utilizing metal–carbon compositions, systematic studies that provide a clear understanding of the synergetic effects are still lacking

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