Abstract
A nonvolatile memory (NVM) with metal nanocrystal (NC) embedded in high-/spl kappa/ dielectrics is proposed. With the larger work function of the metal NC compared to that of silicon NC, the metal NC memory exhibits the better data retention characteristic. The theoretical analysis showing the effect of the electron barrier height on tunneling current density is also presented to support the importance of work function engineering of the NC in NVM structure. The other electrical characteristics such as the programming transient and data endurance are also studied and described in this paper.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
