Abstract
This paper describes the design principles and fabrication process of metal nanocrystal memories. The advantages of metal nanocrystals over their semiconductor counterparts include higher density of states, stronger coupling with the channel, better size scalability, and the design freedom of engineering the work functions to optimize device characteristics. One-dimensional (1-D) analyses are provided to illustrate the concept of work function engineering, both in direct-tunneling and F-N-tunneling regimes. A self-assembled nanocrystal formation process by rapid thermal annealing of ultrathin metal film deposited on top of gate oxide is developed and integrated with NMOSFET to fabricate such devices.
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