Abstract
Metal-oxide memristors are one of the most important sets of memristors for use as the future memory and computing elements. In this context, developing novel methods for producing metal/metal-oxide thin film heterostructures is demanded. Here, we use a 354 nm pulsed laser for treatment of a thin (40 nm) Ni80Fe20 (Permalloy, Py) layer and observe its memristive characteristics. The laser treatment (LT) resulted in oxidation of the surface of the Py layer and therefore forming a uniform Py/Py-oxide heterostructure. The oxygen vacancy formation and rupture for memristivity mechanism is evidenced by I-V measurement of two samples with different oxide thicknesses. The sample with lower thickness of oxidized Py shows lower voltage threshold and higher ON/OFF ratio. Results show that LT method can be used for producing functional thin memristive layers from metallic materials.
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