Metal ion implantation system with three beams

Abstract

Abstract An advanced metal ion implantation system for studying surface modification of materials by metal ion implantation has been developed, and is equipped with three metal vapor vaccum arc (MEVVA) IIA-H ion sources. All three ion sources are mounted horizontally on a large target chamber 600 mm high and 800 mm in diameter. The MEVVA IIA-H source operates in a pulsed mode, with a pulse width of 1.2 ms and a repetition rate up to 50 Hz. A large variety of ion species have been extracted at voltage of 30–80 kV, including the metal, compound and alloy ions. The time-averaged beam current is 10 mA or more for most ion species mentioned above. The target chamber is evacuated by two mechanical vacuum pumps and two molecular pumps. The base pressure in the system is 4 × 10 -4 Pa. The implantation chamber has a hinged door, 500 mm high and 400 mm wide, used to insert the components to be treated. Two viewing ports 100 mm in diameter are provided on each side of the chamber. Two kinds of target holder can be used in the target chamber for implanting components of different shapes.