Abstract
ABSTRACT Metal-insulator transition properties in polycrystalline VOx thin films, which were deposited using rf magnetron sputtering with a vanadium target on Pt/Ti/SiO2/Si substrates, were studied in terms of structural and electrical characteristics. The phase change of VOx thin films by annealing was confirmed from amorphous VOx films to mixed crystalline phases containing V2O3,VO2,V6O13, and V2O5. The metal-insulator transition of VOx thin films was observed by current-voltage measurement as a function of top-electrode area and the temperature. It was demonstrated that the VOx thin films can be applied to memory devices employing the transition from a high-resistance (off) insulating state to a low-resistance (on) metallic state.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
