Abstract
HTS as layered, doped Mott insulators close to the Metal-Insulator Transition (MIT) become insulating at 6.5 kΩ per CuO-plane at nL ≤ 1021/cm3 localized states. The MIT occurs exponentially around point defects and at weak links, the latter interrupt the metallic CuO-plane current flow by insulating seams becoming most prominent in transport. Below Tc, weak links are parameterized by a reduced critical Josephson current jcJ(A/cm2) and by a boundary resistance dominated by a resonant, leakage resistance Rbl(Ω cm2) by Mott insulating seams yielding jcJRbl ≈ 10−12 VΩ cm2/Rb1 ≪ Δ/e for natural junctions and jcJRbl2 > 10−11 V Ω cm2 for artificial, bicrystal junctions. Both junction types enhance rf residual losses Rres ∝ ω2/jcJaJ(jcJR2b1)1/2 with aJ as mean distance betwen weak links and enforce nonlinearities Rhys ∝ ω H/jcJ by their reduced jcJaJ reducing Hc1J ∝ √ jcJ allowing easy Josephson fluxon penetration.
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