Abstract
A metal–insulator transition is realized in hole-doped manganite films via ionic liquid gating. This transition is ascribed to the oxygen vacancies originated from the electrochemical reaction between the trace water inside ionic liquids and the manganite films, and the water is an indispensable factor in this process. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have