Abstract
The problem of screening the Coulomb interaction between charge carriers in type II heterostructures based on transition metal dichalcogenides is analytically solved. At a sufficiently high density of charge carriers, the density dependence of the interlayer exciton energy is obtained. The energy of the interlayer exciton tends to zero in the metal–insulator transition point. The presented scheme of calculations makes it possible to find the temperature dependence of the density of this transition.
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