Abstract
Studies of the temperature dependence of the conductivity on large number of Si–MOS samples with different disorder give evidence for the lack of a universal one-parameter scaling. We demonstrate that the 2D metallic state survives over a wide range of temperatures from 16 mK to 8 K, carrier densities from 0.7–35×10 11 cm −2 and conductances, G, from G≃0.3– 120 e 2/ h . We have revealed experimentally a weak logarithmic correction to the conductivity, which is of the delocalizing sign. We discuss a novel relationship between the partial scaling functions and the conductivity, which explains both, the exponential temperature dependence and the weak logarithmic corrections to the conductivity of the 2D strongly interacting system.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Physica E: Low-dimensional Systems and Nanostructures
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
