Abstract
The authors report the characteristics of novel metal-insulator-semiconductor-type organic light-emitting transistors (MIS-OLETs). The drain current and luminescent intensity of the MIS-OLET can be controlled by changing hole injection carriers by applying a gate bias voltage. In addition, the high performance (400cd∕m2 at VD=−8V) of MIS-OLETs fabricated on a plastic substrate as well as on a glass substrate is demonstrated and described.
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