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Abstract
The electrical conductivity of thin polycrystalline films V(1-x)InxO2 has been studied in a wide temperature range covering the regions of existence of both the metallic and insulator phases. It is shown that with increasing indium concentration, the temperature of the metal-insulator phase transition decreases, and the width of the temperature region of phase coexistence monotonically increases. To explain the temperature dependence of the electrical conductivity of the insulator phase V(1-x)InxO2, a model of hopping conductivity is applied, taking into account the effect of thermal vibrations of atoms on the resonance integral. Calculated the values of the parameter ε depend on the degree of doping of VO2. Keywords: phase transition, vanadium oxides, thin films, polaron, electrical conductivity.
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