Abstract
Metal induced crystallization of amorphous silicon (a-Si) has been studied for a thin Ni layer on the a-Si. The NiSi2 precipitates, nuclei for the crystallization, can be formed at less than 400°C on the a-Si. The growth of the needlelike crystallites, as a result of the migration of NiSi2 precipitates through a-Si, proceeds to directions with normal to the film surface. The crystallization velocity of a-Si is greatly enhanced and thus the crystallization temperature is lowered by applying an electric field to the a-Si. High-quality polycrystalline silicon having needlelike crystallites can be formed at temperatures as low as 400°C.
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