Abstract
Low thermal budget solid‐phase crystallization (SPC) of a‐Si precursor films was achieved using surface treatments with metal‐containing solutions. Two different treatment procedures were demonstrated. With these treatments, one based on a Pd solution and the other on a Ni solution, the SPC time at 600°C was reduced from 18 h to 10 minor less. This approach renders the usual vacuum deposition step used in metal‐induced crystallization unnecessary. We find that the ultraviolet reflectance and Raman shift signals for the crystallized films are independent of whether the SPC‐enhancing metal is applied by vacuum or solution. These characterization results do differ, however, with the metal applied.
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