Abstract

Metal halide perovskites have emerged as promising optoelectronic materials due to the unprecedented success in thin film photovoltaics in the last decade. With the fast development of materials processing and the elucidation of the fundamental properties, perovskites have been successfully introduced to other platforms, such as light-emitting diodes, lasers, transistors, and photodetectors. In particular, perovskite photodetectors have demonstrated appealing performance metrics, including ultralow dark current and noise, high responsivity, fast response, and large linear dynamic range, which can compete with the established silicon technology. This chapter mainly covers (i) processing of perovskite materials both via solution methods and vacuum techniques, (ii) accurate characterization of optoelectronic properties of metal halide perovskite, and (iii) recent advances of perovskite photodetectors and image sensors, mainly including broadband/narrowband visible photodetection and the ionization radiation detectors. Particularly, these achievements and recent progress in device performance are correlated with the excellent optical and electrical properties. In the last section, we also point out the open challenges facing perovskite photodetectors for manufacturing and real applications, followed with future directions that are interesting to explore and may require more research efforts.

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