Abstract
AbstractIn this paper we report on the formation of ohmic contacts to n- AlxGa1-xN alloys. The films were produced by plasma-assisted MBE and doped n- type with silicon at doping levels between 1018 to 1019 cm-3. Contacts were formed by sequential deposition of 200 Å of Ti and 2000 Å of Al and the contact resistivities were determined from TLM measurements. For low Al- content (x<. 10) the I-V characteristics are linear with contact resistivities of between 10-4 to 10-5 cm2. The contacts become progressively non-ohmic at Al concentrations greater than 10%. There results are consistent with the Schottky limit being applicable to these alloys and thus the Ti/Al contact forms Schottky barriers with higher barrier height as the conduction band of the alloy moves towards the vacuum level.
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