Abstract
Tin dioxide (SnO2) ultralong nanobelts were fabricated on silicon substrate by metal catalyzed Chemical Vapor Deposition (CVD) approach. An optical bandgap of 3.66eV was calculated by optical absorbance data. Three Raman active modes peaks were observed at 474.4, 633 and 774.4cm−1. Room temperature photoluminescence (PL) exhibited an orange emission at 600nm. A vapor–liquid–solid (VLS) process based growth mechanism for the formation of SnO2 nanobelts was proposed and discussed briefly. Electrical transport characteristics of nanobelts were studied in dark and under ultraviolet (UV) laser. The fabricated device exhibited high photo-response properties under UV light, indicating their potential application as photo-switches and UV detectors.
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