Abstract
The lifetimes of eleven levels in 28Si have been measured with the Doppler shift attenuation method. The states were excited in the 27Al(p, γ) 28Si reaction. A decay scheme is given for the resonance at E p = 774 keV. The levels at 8.947 and 10.430 MeV were populated at the E p = 2054 keV resonance. The results are compared with rotational-model and Hartree-Fock calculations.
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