Abstract
Mesoscopic fluctuations of the off-diagonal component Rxy of the resistance tensor have been observed in macroscopic Si-MOS structures with a built-in p-channel at T = 77 K under the conditions in which the channel is depleted of free holes. It was found that the fluctuations δRxy are related to transition from the 3D conduction by free holes to 2D-percolation in the fluctuation potential of ionized impurities of the p-doped surface layer depleted due to the field effect. From the analysis of data on δRxy, the correlation length Lc of the percolation cluster, which describes the spatial scale of electrical nonuniformity in the structure, is obtained as a function of the gate potential Vg. The dependence of Lc on Vg is well described in terms of the concepts of nonlinear screening of the fluctuation potential by holes and of the percolation nature of the hole transport for Lc varying from ∼10 nm to ∼1 μm.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
