Abstract
The meso-piezoresistive effect of GaAs/AlAs/InGaAs double barrier supper-lattice thin films and some new types of sensor based on this effect are introduced.The four steps of meso-piezoresistive effect are demonstrated,and the GaAs/AlAs/InGaAs resonant tunneling structure(RTS)is processed on[001]crystal orientation semi-insulating substrate.Pressure measurements show that its meso-piezoresistive sensitivity reaches 2.54×10~(-9)Pa~(-1),which is an order higher than that of silicon.The Nano-electromechanical sensors,such as membrane pressure sensor,four-beam accelerometer and bionic vector hydrophone,are fabricated successfully by micro control-hole technology,and they are measured in pressure tank,vibration table and standing wave tube respectively.Measurement results show that the membrane pressure sensor has good electro-mechanical coupling characteristics; the piezoresistive sensitivity of four-beam accelerometer can be adjusted by the biased voltage of RTS,and the largest sensitivity is in the negative differential resistance(NDR)region;The vector hydrophone has excellent8cosine directivity,and its sensitivity reaches-184.6 dB at 1 000 Hz.which can realize horizontal underwater sound signal detection.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
