Abstract
The fabrication of the first MESFET structures on Hg1-xCdxTe is reported using MOCVD grown layers on GaAs substrates. The 6µm gate devices exhibited a room temperature transconductance of 1.0mS/mm and pinch off voltage of − 4.0V. The Schottky barrier characteristics of the devices were critically dependent on the stoichiometric x ratio of the Hg1-xCdxTe with diode formation evident only at x > 0.5.
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