Mercury cadmium telluride junctions grown by liquid phase epitaxy

Abstract

This article reports the advancement of HgCdTe epitaxial technology. Specifically, we will discuss the grown p–n junctions using liquid phase epitaxy (LPE). In our LPE approach, CdTe is used as the substrate. In the LPE technology studied, an HgCdTe active layer is first grown with a desired composition. After growth is terminated, the furnace is cooled down to room temperature. The HgCdTe layer is then characterized before reinserting into the furnace for the second layer growth. Both P-on-n and N-on-p type of heterostructures are obtained by controlling dopants in each layer properly. For the P-on-n type, the active layer is either un-doped or doped with In and the top layer is doped with column V species. For the N-on-p type, the active layer is undoped and the top layer is doped with In together with Cu. In either case, the location of the p–n junction can be well controlled.