Abstract
The ultimate memristor, which acts as resistive memory and an artificial neural synapse, is made from a single atomic layer. In this manuscript, we present experimental evidence of the memristive properties of a nanopatterned ferroelectric graphene field-effect transistor (FET). The graphene FET has, as a channel, a graphene monolayer transferred onto an HfO2-based ferroelectric material, the channel being nanopatterned with an array of holes with a diameter of 20 nm.
Highlights
The ultimate memristor is based on a single atomic layer/a two-dimensional (2D) material and metallic electrodes
The graphene field-effect transistor (FET) has, as a channel, a graphene monolayer transferred onto an HfO2-based ferroelectric material, the channel being nanopatterned with an array of holes with a diameter of 20 nm
We fabricated field-effect transistors (FETs) at the wafer scale having, as a channel, a graphene monolayer nanopatterned with holes 20 nm in diameter and transferred over a ferroelectric 6 nm HfO2 substrate doped with Zr, grown over 20 nm thick Al2O3 on Si
Summary
The ultimate memristor is based on a single atomic layer/a two-dimensional (2D) material and metallic electrodes. The memristive behavior of ferroelectric FETs is an important issue to be studied In this respect, we fabricated field-effect transistors (FETs) at the wafer scale having, as a channel, a graphene monolayer nanopatterned with holes 20 nm in diameter and transferred over a ferroelectric 6 nm HfO2 substrate doped with Zr (denoted further as HfZrO), grown over 20 nm thick Al2O3 on Si. In this respect, we fabricated field-effect transistors (FETs) at the wafer scale having, as a channel, a graphene monolayer nanopatterned with holes 20 nm in diameter and transferred over a ferroelectric 6 nm HfO2 substrate doped with Zr (denoted further as HfZrO), grown over 20 nm thick Al2O3 on Si Both HfZrO and Al2O3 were grown by atomic layer deposition (ALD) in the same batch. Depending on the length of the graphene channel (i.e., the number of nanoholes), the mobility of this transistor could be engineered from 1000 cm2/Vs up to 10,000 cm2/Vs [17]
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
