Abstract
Micro tensile test specimens of thin film single crystal silicon for the most useful structural materials in MEMS (Micro Electro Mechanical System) devices were fabricated using SOI (Silicon-on-Insulator) wafers and MEMS processes. Dimensions of micro tensile test specimens were thickness of <TEX>$7\mu\textrm{m}$</TEX>, width of 50~<TEX>$350\mu\textrm{m}$</TEX>, and length of 2mm. Top and bottom silicon were etched using by deep RIE (Reactive Ion Etching). Thin film aluminum markers on testing region of specimens with width of <TEX>$5\mu\textrm{m}$</TEX>, lengths of 30~<TEX>$180\mu\textrm{m}$</TEX> and thickness of 200 nm for measuring tensile strain were fabricated by aluminum wet etching method. Fabricated side wall angles of aluminum marker were about <TEX>$45^{\circ}~50^{\circ}$</TEX>. He-Ne laser with wavelength of 633nm was used for checking fringed patterns.
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