Abstract
We demonstrate a new memristive device (IL-Memristor), in which an ionic liquid (IL) serve as a material to control the volatility of the resistance. ILs are ultra-low vapor pressure liquids consisting of cations and anions at room temperature, and their introduction into solid-state processes can provide new avenues in electronic device fabrication. Because the device resistance change in IL-Memristor is governed by a Cu filament formation/rupture in IL, we considered that the Cu filament stability affects the data retention characteristics. Therefore, we controlled the data retention time by clarifying the corrosion mechanism and performing the IL material design based on the results. It was found out that the corrosion of Cu filaments in the IL was ruled by the comproportionation reaction, and that the data retention characteristics of the devices varied depending on the valence of Cu ions added to the IL. Actually, IL-Memristors involving Cu(II) and Cu(I) show volatile and non-volatile nature with respect to the programmed resistance value, respectively. Our results showed that data volatility can be controlled through the metal ion species added to the IL. The present work indicates that IL-memristor is suitable for unique applications such as artificial neuron with tunable fading characteristics that is applicable to phenomena with a wide range of timescale.
Highlights
Memristors, which were proposed as the fourth fundamental elements of electric circuitry in 1971 (Chua, 1971), have been extensively investigated in memory and neuromorphic devices since the reports of the TiO2 memristor in 2008 (Strukov et al, 2008; Yang et al, 2008)
As an influencing factor on the Cu filament stability, we focused on the comproportionation reaction of Cu in ionic liquid (IL) reported by Murase et al (2001)
As expected from the X-ray photoelectron spectroscopy (XPS) measurement results, the data retention time was more than 10 times longer in Cu(I)-doped IL-Memristor than that in Cu(II)-doped IL-Memristor reproducible resistance change was observed in both devices. These results indicate that IL-Memristor with controllable data volatility can be produced through changing metal ion species in ILs
Summary
Memristors, which were proposed as the fourth fundamental elements of electric circuitry in 1971 (Chua, 1971), have been extensively investigated in memory and neuromorphic devices since the reports of the TiO2 memristor in 2008 (Strukov et al, 2008; Yang et al, 2008). A memristor is a two-terminal passive device whose resistance changes with the amount of charge passing through it and is expected to advance electronics and electrochemical research (Sun B. et al, 2019). As the mechanism of resistance change in the memristor, the movement of oxygen vacancies (Sawa, 2008; Akinaga and Shima, 2010) and the electrochemical metallization has been proposed (Gan et al, 2019). Expanding the range of device applications is possible by controlling the metal filament stability in ILMemristor. The stable metal filament have been applied to a non-volatile memory, such as conducting-bridge RAM, which are expected to become next-generation memory devices because of their simple structure and low power consumption (Waser et al, 2009, 2016; Valov et al, 2011). The unstable filament attracts considerable attention because the resultant temporal resistance change is applicable to the emerging devices for the human brain inspired computing (Hasegawa et al, 2011; Deng et al, 2015; Ascoli et al, 2016; Zhang et al, 2018; Midya et al, 2019; Wang et al, 2019; Zhu et al, 2020)
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