Memristor structures for high scalability: Non-linear and symmetric devices utilizing fabrication friendly materials and processes

Abstract

Non-linear, bipolar memristor crossbar structures, suitable for high scalability, have been fabricated in fully compatible Back-End-of-Line materials and processes. The original four mask fabricated crossbar structure exhibited poor electrical characteristics. Detailed failure analysis revealed significant processing artifacts affecting device behavior, including leakage currents from sidewall conduction and thicker than anticipated switching layer. To resolve the problems created by these processing artifacts, a novel device structure, termed ''reverse dual damascene'', was designed and implemented. We present device and failure analysis results from the original structure, the revised structure and process, and show the improved device electrical characterization results.