Memristor property of an amorphous Sn–Ga–O thin-film device deposited using mist chemical-vapor-deposition method

Yuta Takishita,Yasuhiko Nakashima,Sumio Sugisaki,Masaki Kobayashi,Kazuki Hattori,Mutsumi Kimura,Tokiyoshi Matsuda

doi:10.1063/1.5143294

Yuta Takishita, Yasuhiko Nakashima + Show 5 more

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https://doi.org/10.1063/1.5143294

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Abstract

A memristor property of an amorphous Sn–Ga–O (α-TGO) thin-film device deposited using a mist chemical-vapor-deposition (mist-CVD) method has been found. The α-TGO device can be manufactured at a low cost because it does not include rare metals such as In. Moreover, it is expected that the α-TGO device can be manufactured at an even lower cost because the mist-CVD method is performed at atmospheric pressure. Here, the α-TGO layer was deposited using a hot-wall-type mist-CVD method. The hysteresis curve of the memristor characteristic was certainly obtained, and the electric resistances for the high- and low-resistance states were stably repeated at least 20 times. Although the switching ratio and repeatability are not sufficient in the case that it is applied to resistive random access memories, they are acceptable for some applications such as synapse elements in neuromorphic systems.

Highlights

Amorphous metal-oxide semiconductor (AOS) thin-film devices are generally applied to thin-film transistors (TFTs)4 for flat-panel displays (FPDs) such as liquid-crystal displays (LCDs)5 and light-emitting diode displays (OLEDs)6 because the device characteristic is excellent, the operation stability is superior,7 and the manufacturing process is simple
It is expected that the α-TGO thin-film device can be manufactured at an even lower cost because the mist-CVD method is performed at atmospheric pressure
The α-TGO device can be manufactured at a low cost because the α-TGO device does not include rare metals such as In

Summary

Introduction

A memristor is one of the passive devices in circuit elements, whose electric conductance depends on the past history of the flowing current. Recently, they are mainly applied to resistive random access memory (ReRAM) and neural computing. the conventional memristors require expensive composition materials, device structures, and manufacturing processes.On the other hand, amorphous metal-oxide semiconductor (AOS) thin-film devices are generally applied to thin-film transistors (TFTs) for flat-panel displays (FPDs) such as liquid-crystal displays (LCDs) and light-emitting diode displays (OLEDs) because the device characteristic is excellent, the operation stability is superior, and the manufacturing process is simple. AOS thin-film devices are promising for various applications such as arithmetic processors, power devices, and thermoelectric devices because special properties can be added on each demand by optimizing the composition materials, device structures, and manufacturing processes, and they can be manufactured at a low temperature on a large area at a low cost. A memristor is one of the passive devices in circuit elements, whose electric conductance depends on the past history of the flowing current.. A memristor is one of the passive devices in circuit elements, whose electric conductance depends on the past history of the flowing current.1 They are mainly applied to resistive random access memory (ReRAM) and neural computing.. The conventional memristors require expensive composition materials, device structures, and manufacturing processes. AOS thin-film devices are promising for various applications such as arithmetic processors, power devices, and thermoelectric devices because special properties can be added on each demand by optimizing the composition materials, device structures, and manufacturing processes, and they can be manufactured at a low temperature on a large area at a low cost. The authors reported a memristor property of an α-TGO thin-film device, and the above-mentioned problems of the memristors may be resolved in the future

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