Memristor Characteristics via an Integration of Drift and Tunnel Barrier Models

Abstract

ABSTRACTMemristor devices are electrical resistance switches that can retain a state of internal resistance based on the history of applied voltage and current. A memristor model is presented which brings together a current versus voltage tunnel barrier formalism with a physical electronics based predictor for time rate change in the tunnel barrier width. This model makes use of complete domain equations for quantum tunnelling model proposed by Simmons for charge transport for a dielectric placed between two electrodes. Elements of this predictor are based on the physical principles for drift dynamics of the oxygen vacancies in TiO2 unit cells which are created in the electroforming process. Previous memristor models incorporated a tunnel barrier model but they employed a time rate change in tunnel width which was strictly based on empirical fitting with memristor data. Simulations are presented for the fully physical hybrid drift tunnel model demonstrating applicability for the analysis for predicting memristor current voltage properties with allowance for adjustable applied voltages with triangular waveforms. The empirical models cannot be used for repeated cycles of input because the device does not return to its initial condition for the tunnel barrier width. The proposed model is demonstrated to overcome that challenge.