Abstract
On the basis of Ag/In2Te5/W asymmetrical hetero-structures, the memristive samples were prepared by the magnetron sputtering method. The current–voltage (I–V) measurements show the bipolar resistive switching characteristics at the room temperature. The underlying mechanism can be well interpreted by the space–charge-limited conduction effect with redistribution and migration of charged defects responsible for the switching effect. The memristive possesses the properties of reversible switching, reproducible resistance, non-destructive readout, good cycling performance and non-volatile. It seems to be a promising candidate in the prospective non-volatile memory and neuromorphic circuit applications.
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