Abstract
Resistance switching properties of nanostructured In2O3 films grown on LaNiO3 (LNO) bottom electrode (BE) have been investigated for non volatile memory applications. Ag/In2O3/LNO/SiO2 heterostructures were fabricated by pulsed laser deposition. Polycrystalline growth of oxides LNO and In2O3 was confirmed by GIXRD, while AFM show nanostructured growth with smooth surface morphology. Two terminal I–V characteristics showed reproducible two distinct resistance states in the film and unipolar type switching. Typical resistance switching ratio (R on /R off ) of the order of 112 % has been estimated at room temperature. A possible mechanism of the formation and rupture of conducting filament is proposed based on the Joule heating effect with external electron injection at the Ag/In2O3 top interface, whereas the LNO BE acts as oxygen reservoir at the In2O3/LNO interface.
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