Memristive FG-PVA Structures Fabricated with the Use of High Energy Xe Ion Irradiation.

Artem I Ivanov,Nadezhda A Nebogatikova,Irina V Antonova,Andrzej Olejniczak

doi:10.3390/ma15062085

Abstract

A new approach based on the irradiation by heavy high energy ions (Xe ions with 26 and 167 MeV) was used for the creation of graphene quantum dots in the fluorinated matrix and the formation of the memristors in double-layer structures consisting of fluorinated graphene (FG) on polyvinyl alcohol (PVA). As a result, memristive switchings with an ON/OFF current relation ~2–4 orders of magnitude were observed in 2D printed crossbar structures with the active layer consisting of dielectric FG films on PVA after ion irradiation. All used ion energies and fluences (3 × 1010 and 3 × 1011 cm−2) led to the appearance of memristive switchings. Pockets with 103 pulses through each sample were passed for testing, and any changes in the ON/OFF current ratio were not observed. Pulse measurements allowed us to determine the time of crossbar structures opening of about 30–40 ns for the opening voltage of 2.5 V. Thus, the graphene quantum dots created in the fluorinated matrix by the high energy ions are a perspective approach for the development of flexible memristors and signal processing.

Highlights

IntroductionIn the Internet-of-things (IoT) era, energy-efficient and data processing speeds become the bottlenecks for further progress in informative operation technologies
resistive random-access memories (RRAM), known as memristor, is an electronic device based on a metal-insulatormetal (MIM) structure, in which the internal resistance state is the recorded history of the applied voltage, and the switching is the change of the state from a highresistance state to a low-resistance state and back
The appearance of small (~3 nm) graphene quantum dots embedded in fluorinated graphene (FG) nanoparticles is expected in the irradiated films, according to our previous study [16]

Summary

Introduction

In the Internet-of-things (IoT) era, energy-efficient and data processing speeds become the bottlenecks for further progress in informative operation technologies. High-density memories with the analog switching type are the basic need for neuromorphic computing [1,2]. Various analog-programmable emerging nonvolatile memory devices and, first of all, resistive random-access memories (RRAM), are cutting-edge technologies [3,4]. Because of the simple two-terminal design, a low-cost, cost-efficient, ultrahigh density, high-speed operating, etc., RRAM has become the most prospective candidate for emerging nonvolatile memory devices [5–8]. RRAM, known as memristor, is an electronic device based on a metal-insulatormetal (MIM) structure, in which the internal resistance state is the recorded history of the applied voltage (or current), and the switching is the change of the state from a highresistance state to a low-resistance state and back. The extremal parameters of RRAM are known for HfO2

Methods

Results

Discussion

Conclusion