Memristive Devices from CuO Nanoparticles.

Pundalik D Walke,Abu Ul Hassan Sarwar Rana,Verjesh Kumar Magotra,Shovkat Abdullaev,Shavkat U Yuldashev,Tae Won Kang,Dong Jin Lee,Hee Chang Jeon

doi:10.3390/nano10091677

Pundalik D Walke, Abu Ul Hassan Sarwar Rana + Show 6 more

Open Access

https://doi.org/10.3390/nano10091677

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Abstract

Memristive systems can provide a novel strategy to conquer the von Neumann bottleneck by evaluating information where data are located in situ. To meet the rising of artificial neural network (ANN) demand, the implementation of memristor arrays capable of performing matrix multiplication requires highly reproducible devices with low variability and high reliability. Hence, we present an Ag/CuO/SiO2/p-Si heterostructure device that exhibits both resistive switching (RS) and negative differential resistance (NDR). The memristor device was fabricated on p-Si and Indium Tin Oxide (ITO) substrates via cost-effective ultra-spray pyrolysis (USP) method. The quality of CuO nanoparticles was recognized by studying Raman spectroscopy. The topology information was obtained by scanning electron microscopy. The resistive switching and negative differential resistance were measured from current–voltage characteristics. The results were then compared with the Ag/CuO/ITO device to understand the role of native oxide. The interface barrier and traps associated with the defects in the native silicon oxide limited the current in the negative cycle. The barrier confined the filament rupture and reduced the reset variability. Reset was primarily influenced by the filament rupture and detrapping in the native oxide that facilitated smooth reset and NDR in the device. The resistive switching originated from traps in the localized states of amorphous CuO. The set process was mainly dominated by the trap-controlled space-charge-limited; this led to a transition into a Poole–Frenkel conduction. This research opens up new possibilities to improve the switching parameters and promote the application of RS along with NDR.

Highlights

A new era of non-volatile resistive memory devices has emerged due to the physical limitations of existing memory devices
We investigate the effect of native oxide on resistive switching, which reduced the variability and demonstrated the hysteresis current–voltage (I-V) characteristics along with Negative differential resistance (NDR)
The results showed no NDR in the case of Ag/CuO/Indium Tin Oxide (ITO), and we inferred that NDR in Ag/CuO/SiO2/p-Si was mainly due to electric field-induced charge transfer between CuO and SiO2; the high on/off ratio was due to the oxide barrier that contributes to an increase in the off-state resistance

Summary

Introduction

A new era of non-volatile resistive memory devices has emerged due to the physical limitations of existing memory devices. Due to their scope, memristors have drawn substantial attention in the previous decades. Several specific properties make memristors a favorable and promising candidate for non-Boolean neuromorphic computing [1]. Some of its most common attributes include low power consumption, high scalability, multiple switching states and non-damaging readout. Negative differential resistance (NDR) along with resistive switching can have additional applications such as resonant tunneling transistors [4], high-frequency oscillators, [5] memory devices, and multi-level logic devices [6]. The NDR effect in negative bias region reduces variability in reset, which results in a controlled reset

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