Memristive crossbar-based circuit design of back-propagation neural network with synchronous memristance adjustment

Abstract

The performance improvement of CMOS computer fails to meet the enormous data processing requirement of artificial intelligence progressively. The memristive neural network is one of the most promising circuit hardwares to make a breakthrough. This paper proposes a novel memristive synaptic circuit that is composed of four MOS transistors and one memristor (4T1M). The 4T1M synaptic circuit provides flexible control strategies to change memristance or respond to the input signal. Applying the 4T1M synaptic circuit as the cell of memristive crossbar array, based on the structure and algorithm of the back-propagation (BP) neural network, this paper proposes circuit design of the memristive crossbar-based BP neural network. By reusing the 4T1M memristive crossbar array, the computations in the forward-propagation process and back-propagation process of BP neural network are accomplished on the memristive crossbar-based circuit to accelerate the computing speed. The 4T1M memristive crossbar array can change all the cells’ memristance at a time, accordingly, the memristive crossbar-based BP neural network can realize synchronous memristance adjustment. The proposed memristive crossbar-based BP neural network is then evaluated through experiments involving XOR logic operation, iris classification, and MNIST handwritten digit recognition. The experimental results present fewer iterations or higher classification accuracies. Further, the comprehensive comparisons with the existing memristive BP neural networks highlight the advantages of the proposed memristive crossbar-based BP neural network, which achieves the fastest memristance adjustment speed using relatively few components.