Memristive behavior of UiO-66 metal-organic framework single crystal

Abstract

Metal–organic frameworks (MOFs) have recently emerged as a new class of scalable and low energy consumptive materials for microelectronic applications. Here, we experimentally extend the list of MOFs with memristive behavior for electronic data storage. Using 15 µm single crystals of UiO-66 located in 10 µm gap between Au contacts, we demonstrate an electronic set/reset process upon 15 kV cm−1 of an electric field strength under normal conditions. Such low-energy data recording together with an endurance of more than 7 cycles for set/reset opens up prospects for the design of MOF-based electronic and opto-electronic devices.